inchange semiconductor isc product specification isc silicon npn power transistor 2SC3885 description high breakdown voltage- : v cbo = 1400v (min) high switching speed applications horizontal deflection output for high resolution display. high speed switching regul ator outp ut applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1400 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 5 v i c collector current- continuous 7 a i cm collector current- peak 14 a i b b base current- continuous 3.5 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC3885 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; i b = 0 b 600 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1.2a b 5.0 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1.2a b 1.5 v i cbo collector cutoff current v cb = 1400v; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe dc current gain i c = 1a; v ce = 5v 8 f t current-gain?bandwidth product i c = 0.1a; v ce = 10v 3 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 210 pf switching times , resistive load t stg storage time 2.5 s t f fall time i cp = 5a, i b1 = 1a; i b2 = -2a; r l = 40 0.15 s isc website www.iscsemi.cn 2
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